Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon

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Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon

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Title: Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon
Author: Genin, F. Y.; Warrender, J. M.; Carey, J. E.; Crouch, C. H.; Aziz, Michael J.; Mazur, Eric

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Citation: Crouch, C. H., J. E. Carey, J. M. Warrender, Michael J. Aziz, Eric Mazur, and F. Y. Genin. 2004. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon. Applied Physics Letters 84, no. 11: 1850-1852
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Abstract: We compare the optical properties, chemical composition, and crystallinity of silicon microstructures formed in the presence of SF6 by femtosecond laser irradiation and by nanosecond laser irradiation. In spite of very different morphology and crystallinity, the optical properties and chemical composition of the two types of microstructures are very similar. The structures formed with femtosecond (fs) pulses are covered with a disordered nanocrystalline surface layer less than 1 um thick, while those formed with nanosecond (ns) pulses have very little disorder. Both ns-laser-formed and fs-laser-formed structures absorb near-infrared (1.1 – 2.5 um) radiation strongly and have roughly 0.5% sulfur impurities.
Published Version: http://dx.doi.org/10.1063/1.1667004
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10345121
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