Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators

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Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators

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Title: Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators
Author: George, H. Bola; Hoogerheide, David Paul; Madi, Charbel S.; Bell, David C.; Golovchenko, Jene A.; Aziz, Michael J.

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Citation: George, H. Bola, David P. Hoogerheide, Charbel S. Madi, David C. Bell, Jene A. Golovchenko, and Michael J. Aziz. 2010. Ion-sculpting of nanopores in amorphous metals, semiconductors and insulators. Applied Physics Letters 96, no.26: 263111.
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Abstract: We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range of amorphous materials including insulators (SiO\(_2\) and SiN), semiconductors (a-Si), and metallic glasses (Pd\(_{80}\)Si\(_{20}\)) — the building blocks of a single-digit nanometer electronic device. Ion irradiation of nanopores in crystalline materials (Pt and Ag) does not cause nanopore closure. Ion irradiation of c-Si pores below 100 °C and above 600 °C, straddling the amorphous-crystalline dynamic transition temperature, yields closure at the lower temperature but no mass transport at the higher temperature. Ion beam nanosculpting appears to be restricted to materials that either are or become amorphous during ion irradiation.
Published Version: doi:10.1063/1.3441406
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10345122
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