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dc.contributor.authorRegan, M. J.
dc.contributor.authorMagnussen, O. M.
dc.contributor.authorKawamoto, E. H.
dc.contributor.authorPershan, Peter S.
dc.contributor.authorOcko, B. M.
dc.contributor.authorMaskil, N.
dc.contributor.authorDeutsch, M.
dc.contributor.authorLee, S.
dc.contributor.authorPenanen, K.
dc.contributor.authorBerman, L. E.
dc.date.accessioned2013-02-28T21:28:09Z
dc.date.issued1996
dc.identifier.citationRegan, M. J., O. M. Magnussen, E. H. Kawamoto, Peter S. Pershan, B. M. Ocko, N. Maskil, M. Deutsch, S. Lee, K. Penanen, and L. E. Berman. 1996. X-ray studies of atomic layering at liquid metal surfaces. Journal of Non-Crystalline Solids 205-207(2): 762-766.en_US
dc.identifier.issn0022-3093en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:10356600
dc.description.abstractSurface-induced layering has been observed in liquid gallium and mercury using X-ray reflectivity. The specular reflectivity R(\(q_z\)) has been measured to wavevector transfers as large as \(q_z\) = 3.0 Å\(^{−1}\). For Ga, the only major deviations from Fresnel theory \(R_f\) are near qz = 2.4 Å\(^{−1}\), where there is a peak in the ratio \(R/R_f\), For Hg, there is a broad peak near 2.15 Å\(^{−1}\). The data have been collected on a sputtered clean, ultra-high vacuum Ga surface and on a Hg surface in a reducing atmosphere of hydrogen. The data can be explained with a layered liquid/vapor interface that is roughened by thermally excited capillary waves. The layer spacing is similar to the Ga or Hg atomic dimensions, extending into the bulk with an exponential decay length of 6 Å for Ga and 3 Å for Hg.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherElsevieren_US
dc.relation.isversionofdoi:10.1016/S0022-3093(96)00303-1en_US
dash.licenseMETA_ONLY
dc.titleX-ray Studies of Atomic Layering at Liquid Metal Surfacesen_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalJournal of Non-Crystalline Solidsen_US
dash.depositing.authorPershan, Peter S.
dash.embargo.until10000-01-01
dc.identifier.doi10.1016/S0022-3093(96)00303-1*
dash.contributor.affiliatedPershan, Peter


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