Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer
Kosowsky, S. D.
Krisch, K. S.
Green, M. L.
Feldman, L. C.
Roy, P. K.
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CitationKosowsky, S. D., Peter S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, and P. K. Roy. 1997. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters 70(23): 3119-3121.
AbstractThermally grown Si(001)/SiO\(_2\) samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO\(_2\) interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:10357486
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