Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer

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Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer

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Title: Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer
Author: Kosowsky, S. D.; Pershan, Peter S.; Krisch, K. S.; Bevk, J.; Green, M. L.; Brasen, D.; Feldman, L. C.; Roy, P. K.

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Citation: Kosowsky, S. D., Peter S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, and P. K. Roy. 1997. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters 70(23): 3119-3121.
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Abstract: Thermally grown Si(001)/SiO\(_2\) samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO\(_2\) interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.
Published Version: doi:10.1063/1.119090
Other Sources: http://adsabs.harvard.edu/abs/1997ApPhL..70.3119K
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357486
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