X-Ray Grazing Incidence Diffraction from Alkylsiloxane Monolayers on Silicon Wafers

 Title: X-Ray Grazing Incidence Diffraction from Alkylsiloxane Monolayers on Silicon Wafers Author: Tidswell, I. M.; Rabedeau, T. A.; Pershan, Peter S.; Kosowsky, S. D.; Folkers, J. P.; Whitesides, George M. Note: Order does not necessarily reflect citation order of authors. Citation: Tidswell, I. M., T. A. Rabedeau, Peter S. Pershan, S. D. Kosowsky, J. P. Folkers, and George M. Whitesides. 1991. X-ray grazing incidence diffraction from alkylsiloxane monolayers on silicon wafers. Journal of Chemical Physics 95(4): 2854-2861. Full Text & Related Files: Tidswell_X-ray_1991.pdf (801.2Kb; PDF) Abstract: X‐ray reflection (both specular and off‐specular) and grazing incidence diffraction (GID) have been used to study the structure of alkylsiloxane monolayers ($$n‐C_{18}H_{37}SiO_{1.5}$$) formed by self‐assembly from solution on silicon wafers. GID studies of complete monolayers reveal a single ring of scattering associated with the monolayer. The Lorentzian line shape of this ring indicates that the film is characterized by liquidlike order, with a typical translational correlation length of about 45 Å. The thermal coefficient of expansion of the monolayer, as determined from the GID peak position, is approximately equal to the value for liquid n‐alkanes. Upon either heating or cooling, the monolayer correlation lengths decrease, suggesting that the differential thermal‐expansion coefficients of the film and substrate figure prominently in thermal changes of the molecular ordering. GID data for incomplete monolayers also reveal a single ring of scattering associated with the monolayer. While both the translational correlation lengths and integrated peak areas are significantly reduced relative to complete monolayers, the peak positions of the incomplete monolayers are comparable to those of complete monolayers. Given the lower average areal density of incomplete monolayers, this finding implies that incomplete monolayers are inhomogeneous. Published Version: doi:10.1063/1.460886 Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357545 Downloads of this work: