# X‐Ray Reflectivity Studies of SiO$$_2$$/Si(001)

 Title: X‐Ray Reflectivity Studies of SiO$$_2$$/Si(001) Author: Rabedeau, T. A.; Tidswell, I. M.; Pershan, Peter S.; Bevk, J.; Freer, B. S. Note: Order does not necessarily reflect citation order of authors. Citation: Rabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X‐ray reflectivity studies of SiO$$_2$$/Si(001). Applied Physics Letters 59(26): 3422-3424. Full Text & Related Files: Rabedeau_X-ray_1991a.pdf (450.5Kb; PDF) Abstract: X‐ray reflectivity has been utilized in a study of the SiO$$_2$$/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near ($$\pm$$110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the ‘‘native’’ dry oxide thickness is approximately 5 Å with a 1‐Å vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a $$\sim$$2.7‐Å decay length. Published Version: doi:10.1063/1.105695 Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357570 Downloads of this work: