X‐Ray Reflectivity Studies of SiO\(_2\)/Si(001)

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X‐Ray Reflectivity Studies of SiO\(_2\)/Si(001)

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Title: X‐Ray Reflectivity Studies of SiO\(_2\)/Si(001)
Author: Rabedeau, T. A.; Tidswell, I. M.; Pershan, Peter S.; Bevk, J.; Freer, B. S.

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Citation: Rabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X‐ray reflectivity studies of SiO\(_2\)/Si(001). Applied Physics Letters 59(26): 3422-3424.
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Abstract: X‐ray reflectivity has been utilized in a study of the SiO\(_2\)/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (\(\pm\)110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the ‘‘native’’ dry oxide thickness is approximately 5 Å with a 1‐Å vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a \(\sim\)2.7‐Å decay length.
Published Version: doi:10.1063/1.105695
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357570
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