X‐Ray Reflectivity Studies of SiO\(_2\)/Si(001)
Rabedeau, T. A.
Tidswell, I. M.
Freer, B. S.
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CitationRabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X‐ray reflectivity studies of SiO\(_2\)/Si(001). Applied Physics Letters 59(26): 3422-3424.
AbstractX‐ray reflectivity has been utilized in a study of the SiO\(_2\)/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (\(\pm\)110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the ‘‘native’’ dry oxide thickness is approximately 5 Å with a 1‐Å vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a \(\sim\)2.7‐Å decay length.
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