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dc.contributor.authorRabedeau, T. A.
dc.contributor.authorTidswell, I. M.
dc.contributor.authorPershan, Peter S.
dc.contributor.authorBevk, J.
dc.contributor.authorFreer, B. S.
dc.date.accessioned2013-03-01T16:58:29Z
dc.date.issued1991
dc.identifier.citationRabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X‐ray reflectivity studies of SiO\(_2\)/Si(001). Applied Physics Letters 59(26): 3422-3424.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:10357570
dc.description.abstractX‐ray reflectivity has been utilized in a study of the SiO\(_2\)/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (\(\pm\)110) demonstrates the Si lattice termination of the wafers studied is characterized by a highly ordered array of terraces separated by monoatomic steps. Specular reflectivity data indicate the ‘‘native’’ dry oxide thickness is approximately 5 Å with a 1‐Å vacuum interface width. Residual laminar order in the oxide electron density along the oxide/Si interfacial normal decays exponentially from the oxide/Si interface with a \(\sim\)2.7‐Å decay length.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofdoi:10.1063/1.105695en_US
dash.licenseLAA
dc.titleX‐Ray Reflectivity Studies of SiO\(_2\)/Si(001)en_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorPershan, Peter S.
dc.date.available2013-03-01T16:58:29Z
dc.identifier.doi10.1063/1.105695*
dash.contributor.affiliatedPershan, Peter


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