X-Ray Scattering Studies of the SiO\(_2\)/Si(001) Interfacial Structure

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X-Ray Scattering Studies of the SiO\(_2\)/Si(001) Interfacial Structure

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Title: X-Ray Scattering Studies of the SiO\(_2\)/Si(001) Interfacial Structure
Author: Rabedeau, T. A.; Tidswell, I. M.; Pershan, Peter S.; Bevk, J.; Freer, B. S.

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Citation: Rabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X-ray scattering studies of the SiO\(_2\)/Si(001) interfacial structure. Applied Physics Letters 59(6): 706-708.
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Abstract: X‐ray scattering has been utilized in a study of the SiO\(_2\)/Si(001) interfacial structure. Scattering data provide evidence for a low coverage 2×1 epitaxial structure at the SiO\(_2\)/Si interface for dry oxides grown on highly ordered Si surfaces at room temperature. The observed scattering is consistent with distorted dimer models of the interfacial structure. Thermal annealing substantially reduces the order of the 2×1 structure while prolonged exposure to humid air almost eliminates the 2×1 symmetry scattering. These findings suggest that the observed 2×1 order is associated with a metastable, intermediate state of the dry oxidation process.
Published Version: doi:10.1063/1.105371
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357571
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