# X-Ray Scattering Studies of the SiO$$_2$$/Si(001) Interfacial Structure

 Title: X-Ray Scattering Studies of the SiO$$_2$$/Si(001) Interfacial Structure Author: Rabedeau, T. A.; Tidswell, I. M.; Pershan, Peter S.; Bevk, J.; Freer, B. S. Note: Order does not necessarily reflect citation order of authors. Citation: Rabedeau, T. A., I. M. Tidswell, Peter S. Pershan, J. Bevk, and B. S. Freer. 1991. X-ray scattering studies of the SiO$$_2$$/Si(001) interfacial structure. Applied Physics Letters 59(6): 706-708. Full Text & Related Files: Rabedeau_X-ray_1991b.pdf (511.2Kb; PDF) Abstract: X‐ray scattering has been utilized in a study of the SiO$$_2$$/Si(001) interfacial structure. Scattering data provide evidence for a low coverage 2×1 epitaxial structure at the SiO$$_2$$/Si interface for dry oxides grown on highly ordered Si surfaces at room temperature. The observed scattering is consistent with distorted dimer models of the interfacial structure. Thermal annealing substantially reduces the order of the 2×1 structure while prolonged exposure to humid air almost eliminates the 2×1 symmetry scattering. These findings suggest that the observed 2×1 order is associated with a metastable, intermediate state of the dry oxidation process. Published Version: doi:10.1063/1.105371 Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357571 Downloads of this work: