# Structural Relaxation of Amorphous $$Pd_{82}Si_{18}$$: X-Ray Measurements, Electrical-Resistivity Measurements, and a Comparison Using the Ziman Theory

 Title: Structural Relaxation of Amorphous $$Pd_{82}Si_{18}$$: X-Ray Measurements, Electrical-Resistivity Measurements, and a Comparison Using the Ziman Theory Author: Chason, E.; Greer, A. L.; Kelton, K. F.; Pershan, Peter S.; Sorensen, L. B.; Spaepen, Frans A.; Weiss, A. H. Note: Order does not necessarily reflect citation order of authors. Citation: Chason, E., A. L. Greer, K. F. Kelton, Peter S. Pershan, L. B. Sorensen, Frans A. Spaepen, and A. H. Weiss. 1985. Structural relaxation of amorphous $$Pd_{82}Si_{18}$$: X-ray measurements, electrical-resistivity measurements, and a comparison using the Ziman theory. Physical Review B 32(6): 3399-3408. Full Text & Related Files: Chason_Structural.pdf (2.062Mb; PDF) Abstract: Structural relaxation in amorphous $$Pd_{82}Si_{18}$$ is studied using high-precision x-ray diffraction. The x-ray structure factor S(k) and the density ρ (determined from the x-ray absorption), are measured simultaneously as a function of the annealing conditions. The measured changes in S(k) are compared with those expected from simple densification using a Percus-Yevick model with two hard-sphere diameters. The variation in the electrical resistivity with annealing is also measured and is compared with the resistivity change estimated from the x-ray measurements using the Ziman theory. To allow a direct comparison of the x-ray and electrical measurements, we derive an approximate relationship between the x-ray atomic scattering factor and the pseudopotential as a substitute for a first-principles calculation. The combination of the low scattering rate from the amorphous samples and the high precision (<0.1%) necessary to allow direct comparison requires special techniques to maintain adequate system stability. Published Version: doi:10.1103/PhysRevB.32.3399 Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357691 Downloads of this work: