Show simple item record

dc.contributor.authorSi, Mengwei
dc.contributor.authorGu, Jiangjiang J.
dc.contributor.authorWang, Xinwei
dc.contributor.authorShao, Jiayi
dc.contributor.authorLi, Xuefei
dc.contributor.authorManfra, Michael J.
dc.contributor.authorGordon, Roy Gerald
dc.contributor.authorYe, Peide D.
dc.date.accessioned2013-03-11T15:53:53Z
dc.date.issued2013
dc.identifier.citationSi, Mengwei, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy Gerald Gordon, and Peide D. Ye. 2013. Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 102(9): 093505.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.issn1077-3118en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:10384785
dc.description.abstractInGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30 min \(400^{\circ}C\) FGA \((4\%H_2/96\%N_2)\) is found to improve the quality of the \(Al_2O_3/InGaAs\) interface, resulting in a subthreshold slope reduction over 20 mV/dec (from 117 mV/dec in average to 93 mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths down to 20 nm, indicating excellent gate electrostatic control. With the FGA passivation and the ultra-thin nanowire structure, InGaAs MOSFETs are promising for future logic applications.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofdoi:10.1063/1.4794846en_US
dash.licenseOAP
dc.subjectaluminaen_US
dc.subjectannealingen_US
dc.subjectgallium arsenideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectMOSFETen_US
dc.subjectnanowiresen_US
dc.subjectpassivationen_US
dc.titleEffects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistorsen_US
dc.typeJournal Articleen_US
dc.description.versionAuthor's Originalen_US
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorGordon, Roy Gerald
dc.date.available2013-03-11T15:53:53Z
dc.identifier.doi10.1063/1.4794846*
dash.contributor.affiliatedGordon, Roy


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record