High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

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High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

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Title: High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer
Author: Gu, J. J.; Liu, Y. Q.; Xu, M.; Gordon, Roy Gerald; Ye, P. D.; Celler, G. K.

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Citation: Gu, J. J., Y. Q. Liu, M. Xu, G. K. Celler, Roy Gerald Gordon, and P. D. Ye. 2010. High performance atomic-layer-deposited\(LaLuO_3/Ge\)-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown \(GeO_2\) as interfacial passivation layer. Applied Physics Letters 97(1): 012106.
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Abstract: Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) \(LaLuO_3\) as gate dielectric. Significant improvement in both on-state current and effective hole mobility has been observed for devices with thermal \(GeO_2\) passivation. The negative threshold voltage \((V_T)\) shift in devices with \(GeO_2\) interfacial layer (IL) further demonstrates the effectiveness of surface passivation. Results from low temperature mobility characterization show that phonon scattering is the dominant scattering mechanism at a large inversion charge, indicating good interface quality. The combination of higher-k \(LaLuO_3\) and ultrathin \(GeO_2\) IL is a promising solution to the tradeoff between the aggressive equivalent oxide thickness scaling and good interface quality.
Published Version: doi:10.1063/1.3462303
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10454583
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