Enhancing the Efficiency of SnS Solar Cells bia Band-Offset Engineering with a Zinc Oxysulfide Buffer Layer

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Enhancing the Efficiency of SnS Solar Cells bia Band-Offset Engineering with a Zinc Oxysulfide Buffer Layer

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Title: Enhancing the Efficiency of SnS Solar Cells bia Band-Offset Engineering with a Zinc Oxysulfide Buffer Layer
Author: Sinsermsuksakul, Prasert; Hartman, Katy; Kim, Sang Bok; Sun, Leizhi; Park, Helen Hejin; Chakraborty, Rupak; Buonassisi, Tonio; Gordon, Roy Gerald

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Citation: Sinsermsuksakul, Prasert, Katy Hartman, Sang Bok Kim, Jaeyeong Heo, Leizhi Sun, Helen Hejin Park, Rupak Chakraborty, Tonio Buonassisi and Roy G. Gordon. 2013. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer. Applied Physics Letters 102(5): 053901.
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Abstract: SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density \((J_{sc})\), open circuit voltage \((V_{oc})\), and fill factor (FF) of \(19.4 mA/cm^{2}\), 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.
Published Version: doi:10.1063/1.4789855
Other Sources: http://www.chem.harvard.edu/groups/gordon/SnS%20solar%20cell%20band-offset%20engg.APL102p053901(2013).pdf
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10564511
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