Microscopic Model of Heteroepitaxy of GaAs on Si(100)

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Microscopic Model of Heteroepitaxy of GaAs on Si(100)

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Title: Microscopic Model of Heteroepitaxy of GaAs on Si(100)
Author: Turner, George W.; Joannopoulos, John D.; Alerhand, Oscar L.; Kaxiras, Efthimios

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Citation: Kaxiras, Efthimios, Oscar L. Alerhand, John D. Joannopoulos, and George W. Turner. 1989. Microscopic model of heteroepitaxy of GaAs on Si(100). Physical Review Letters 62, no. 21: 2484-2486.
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Abstract: A new microscopic model of heteroepitaxial growth is introduced using GaAs on Si(100) as a prototype. This model takes into account specific features of surface topology, predicts that in the prototype system conventional two-dimensional epitaxy should be inhibited, and provides a fundamental explanation for three-dimensional nature of the initial stages of growth. The ingredients of the model, which are supported by total-energy calculations, include new structural geometries for each state of growth and the chemical and rehybridization reactions linking these stages.
Published Version: http://dx.doi.org/10.1103/PhysRevLett.62.2484
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:10605460
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