Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks
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CitationEl-Ella, H. A. R., F. Rol, M. J. Kappers, K. J. Russell, E. L. Hu, and R. A. Oliver. 2011. Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks. Applied Physics Letters 98 (13): 131909.
AbstractMicrodisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. Formation of microdisks from two near-identical structures with differing dislocation densities was carried out and investigated using microphotoluminescence. This confirmed the existence of quantum dots through the presence of resolution limited spectral lines and showed a clear correlation between the resulting modes quality factors and the dislocation densities within the disks. The disks with higher dislocation densities showed up to 80% lower quality factors than the low dislocation density disks.
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