Interplay of Cavity Thickness and Metal Absorption in Thin-film InGaN Photonic Crystal Light-emitting Diodes

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Interplay of Cavity Thickness and Metal Absorption in Thin-film InGaN Photonic Crystal Light-emitting Diodes

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Title: Interplay of Cavity Thickness and Metal Absorption in Thin-film InGaN Photonic Crystal Light-emitting Diodes
Author: Rangel, Elizabeth; Matioli, Elison; Chen, Hung-Tse; Choi, Yong-Seok; Weisbuch, Claude; Speck, James S.; Hu, Evelyn

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Citation: Rangel, Elizabeth, Elison Matioli, Hung-Tse Chen, Yong-Seok Choi, Claude Weisbuch, James S. Speck, and Evelyn L. Hu. 2010. Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes. Applied Physics Letters 97, no. 6: 061118.
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Abstract: Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 μm were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both cases. The 800-nm-thick PhC LEDs yielded only a slight improvement in total light output over the 3.45-μm-thick PhC LEDs. Simulations indicate that, except for ultrathin devices well below 800 nm, the balance between PhC extraction and metal absorption at the backside mirror results in modal extraction efficiencies that are almost independent of device thickness, but highly dependent on mirror reflectivity.
Published Version: 10.1063/1.3480421
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11130440
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