Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

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Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

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Title: Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
Author: Park, Helen Hejin; Heasley, Rachel Lenox; Gordon, Roy Gerald

Note: Order does not necessarily reflect citation order of authors.

Citation: Hejin Park, Helen, Rachel Heasley, and Roy G. Gordon. 2013. “Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing.” Applied Physics Letters 102 (13): 132110.
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Abstract: Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from \(10^{19}\) to \(10^{15} cm^{−3}\) by post-deposition annealing in oxygen at temperatures from 200 °C to 290 °C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by only ∼0.1 eV, and the crystallinity did not change much after annealing. The oxygen/zinc ratio increased by 0.05 after annealing, but the stoichiometry remained uniform throughout the film.
Published Version: doi:10.1063/1.4800928
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11151522
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