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dc.contributor.authorPark, Helen Hejin
dc.contributor.authorHeasley, Rachel Lenox
dc.contributor.authorGordon, Roy Gerald
dc.date.accessioned2013-10-08T16:27:48Z
dc.date.issued2013
dc.identifierQuick submit: 2013-04-01T10:05:08-04:00
dc.identifier.citationHejin Park, Helen, Rachel Heasley, and Roy G. Gordon. 2013. “Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing.” Applied Physics Letters 102 (13): 132110.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:11151522
dc.description.abstractZinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from \(10^{19}\) to \(10^{15} cm^{−3}\) by post-deposition annealing in oxygen at temperatures from 200 °C to 290 °C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by only ∼0.1 eV, and the crystallinity did not change much after annealing. The oxygen/zinc ratio increased by 0.05 after annealing, but the stoichiometry remained uniform throughout the film.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofdoi:10.1063/1.4800928en_US
dash.licenseOAP
dc.subjectannealingen_US
dc.subjectatomic layer depositionen_US
dc.subjectcarrier densityen_US
dc.subjectenergy gapen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectsemiconductor growthen_US
dc.subjectsemi conductor thin filmsen_US
dc.subjectstoichiometryen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectzinc compoundsen_US
dc.titleAtomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealingen_US
dc.typeJournal Articleen_US
dc.date.updated2013-04-01T14:05:17Z
dc.description.versionAccepted Manuscripten_US
dc.rights.holderPark, Helen Hejin; Heasley, Rachel; Gordon, Roy G.
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorGordon, Roy Gerald
dc.date.available2013-10-08T16:27:48Z
dc.identifier.doi10.1063/1.4800928*
dash.contributor.affiliatedHeasley, Rachel Lenox
dash.contributor.affiliatedPark, Helen
dash.contributor.affiliatedGordon, Roy


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