From Hopping to Ballistic Transport in Graphene-Based Electronic Devices

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From Hopping to Ballistic Transport in Graphene-Based Electronic Devices

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Title: From Hopping to Ballistic Transport in Graphene-Based Electronic Devices
Author: Taychatanapat, Thiti
Citation: Taychatanapat, Thiti. 2013. From Hopping to Ballistic Transport in Graphene-Based Electronic Devices. Doctoral dissertation, Harvard University.
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Abstract: This thesis describes electronic transport experiments in graphene from the hopping to the ballistic regime. The first experiment studies dual-gated bilayer graphene devices. By applying an electric field with these dual gates, we can open a band gap in bilayer graphene and observe an increase in resistance of over six orders of magnitude as well as a strongly non-linear behavior in the transport characteristics. A temperature-dependence study of resistance at large electric field at the charge neutrality point shows the change in the transport mechanism from a hopping dominated regime at low temperature to a diffusive regime at high temperature.
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158248
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