Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing
Lee, Jonathan C.
Buckley, Bob B.
Yale, Christopher G.
Awschalom, David D.
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CitationAharonovich, Igor, Jonathan C. Lee, Andrew P. Magyar, Bob B. Buckley, Christopher G. Yale, David D. Awschalom, and Evelyn L. Hu. 2012. Homoepitaxial growth of single crystal diamond membranes for quantum information processing. Advanced Materials 24(10): OP54-OP59.
AbstractFabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond membranes using a conventional microwave chemical vapor deposition (CVD) technique. The grown membranes, only a few hundred nanometers thick, show bright luminescence, excellent Raman signature and good NV center electronic spin coherence times. Microdisk cavities fabricated from these membranes exhibit quality factors of up to 3000, overlapping with NV center emission. Our methodology offers a scalable approach for diamond device fabrication for photonics, spintronics, optomechanics and sensing applications.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:11859326
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