Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

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Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

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Title: Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond
Author: Pham, Linh My; Bar-Gill, N.; LeSage, David Anthony; Belthangady, Chinmay N.; Stacey, A.; Markham, M.; Twitchen, D. J.; Lukin, Mikhail D.; Walsworth, Ronald L.

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Citation: Pham, L. M., N. Bar-Gill, D. Le Sage, C. Belthangady, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, and R. L. Walsworth. 2012. “Enhanced Metrology Using Preferential Orientation of Nitrogen-Vacancy Centers in Diamond.” Phys. Rev. B 86 (12) (September): 121202(R)
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Abstract: We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.
Published Version: doi:10.1103/physrevb.86.121202
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11870337
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