# Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

 Title: Increased negatively charged nitrogen-vacancy centers in fluorinated diamond Author: Cui, Shanying; Hu, Evelyn Note: Order does not necessarily reflect citation order of authors. Citation: Cui, Shanying, and Evelyn L. Hu. 2013. Increased Negatively Charged Nitrogen-Vacancy Centers in Fluorinated Diamond. Applied Physics Letters 103(5): 051603. Full Text & Related Files: Cui_IncreasedNegatively.pdf (521.8Kb; PDF) Abstract: We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with $$CF_4$$ plasma, and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveals that fluorine-treated surfaces lead to a higher and more stable negatively charged nitrogen vacancy $$(NV^−)$$ population than oxygen-terminated surfaces. $$NV^−$$ population is estimated by the ratio of negative to neutral charged NV zero-phonon lines. Surface chemistry control of $$NV^−$$ density is an important step towards improving the optical and spin properties of NVs for quantum information processing and magnetic sensing. Published Version: doi:10.1063/1.4817651 Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:12111391 Downloads of this work: