Increased negatively charged nitrogen-vacancy centers in fluorinated diamond
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CitationCui, Shanying, and Evelyn L. Hu. 2013. Increased Negatively Charged Nitrogen-Vacancy Centers in Fluorinated Diamond. Applied Physics Letters 103(5): 051603.
AbstractWe investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with \(CF_4\) plasma, and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveals that fluorine-treated surfaces lead to a higher and more stable negatively charged nitrogen vacancy \((NV^−)\) population than oxygen-terminated surfaces. \(NV^−\) population is estimated by the ratio of negative to neutral charged NV zero-phonon lines. Surface chemistry control of \(NV^−\) density is an important step towards improving the optical and spin properties of NVs for quantum information processing and magnetic sensing.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:12111391
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