Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

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Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

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Title: Increased negatively charged nitrogen-vacancy centers in fluorinated diamond
Author: Cui, Shanying; Hu, Evelyn

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Citation: Cui, Shanying, and Evelyn L. Hu. 2013. Increased Negatively Charged Nitrogen-Vacancy Centers in Fluorinated Diamond. Applied Physics Letters 103(5): 051603.
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Abstract: We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with \(CF_4\) plasma, and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveals that fluorine-treated surfaces lead to a higher and more stable negatively charged nitrogen vacancy \((NV^−)\) population than oxygen-terminated surfaces. \(NV^−\) population is estimated by the ratio of negative to neutral charged NV zero-phonon lines. Surface chemistry control of \(NV^−\) density is an important step towards improving the optical and spin properties of NVs for quantum information processing and magnetic sensing.
Published Version: doi:10.1063/1.4817651
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:12111391
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