Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–Insulator Transition Characteristics
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CitationCui, Yanjie, Xinwei Wang, You Zhou, Roy Gerald Gordon, and Shriram Ramanathan. 2012. Synthesis of Vanadium Dioxide Thin Films on Conducting Oxides and Metal–Insulator Transition Characteristics. Journal of Crystal Growth 338(1): 96–102.
AbstractWe report on growth and physical properties of vanadium dioxide \((VO_2)\) films on model conducting oxide underlayers (Nb-doped \(SrTiO_3\) and \(RuO_2\) buffered \(TiO_2\) single crystals). The \(VO_2\) films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The \(VO_2\) film grown on Nb doped \(SrTiO_3\) shows over two orders of magnitude metal–insulator transition, while \(VO_2\) film on \(RuO_2\) buffered \(TiO_2\) shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the \(VO_2\) films grown on Nb-doped \(SrTiO_3\) substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:12132061
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