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dc.contributor.advisorCrozier, Kenneth B.
dc.contributor.authorPark, Hyunsung
dc.date.accessioned2014-10-21T17:43:10Z
dc.date.issued2014-10-21
dc.date.submitted2014
dc.identifier.citationPark, Hyunsung. 2014. Vertical Silicon Nanowires for Image Sensor Applications. Doctoral dissertation, Harvard University.en_US
dc.identifier.otherhttp://dissertations.umi.com/gsas.harvard.inactive:11830en
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:13065028
dc.description.abstractConventional image sensors achieve color imaging using absorptive organic dye filters. These face considerable challenges however in the trend toward ever higher pixel densities and advanced imaging methods such as multispectral imaging and polarization-resolved imaging. In this dissertation, we investigate the optical properties of vertical silicon nanowires with the goal of image sensor applications. First, we demonstrate a multispectral imaging system that uses a novel filter that consists of vertical silicon nanowires embedded in a transparent medium. Second, we demonstrate pixels consisting of vertical silicon nanowires with integrated photodetectors. We show that their spectral sensitivities are governed by nanowire radius, and perform color imaging. In addition, we demonstrate polarization-resolving photodetectors consisting of silicon nanowires with elliptical cross sections. Finally, we discuss a dual detector device. Each pixel consists of vertical silicon nanowires (incorporating photodetectors) formed above a silicon substrate (that also incorporates a photodetector). Our method is very practical from a manufacturing standpoint because all filter functions are defined at the same time through a single lithography step. In addition, our approach is conceptually different from current filter-based methods, as absorbed light in our device is converted to photocurrent, rather than discarded. This ultimately presents the opportunity for very high photon efficiency.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dash.licenseLAA
dc.subjectElectrical engineeringen_US
dc.subjectNanotechnologyen_US
dc.subjectcoloren_US
dc.subjectimage sensoren_US
dc.subjectmultispectralen_US
dc.subjectnanowireen_US
dc.subjectphotodetectoren_US
dc.subjectpolarizationen_US
dc.titleVertical Silicon Nanowires for Image Sensor Applicationsen_US
dc.typeThesis or Dissertationen_US
dash.depositing.authorPark, Hyunsung
dc.date.available2014-10-21T17:43:10Z
thesis.degree.date2014en_US
thesis.degree.disciplineEngineering and Applied Sciencesen_US
thesis.degree.grantorHarvard Universityen_US
thesis.degree.leveldoctoralen_US
thesis.degree.namePh.D.en_US
dc.contributor.committeeMemberHabbal, Fawwazen_US
dc.contributor.committeeMemberZickler, Todden_US
dc.contributor.committeeMemberWood, Roberten_US
dash.contributor.affiliatedPark, Hyunsung


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