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dc.contributor.authorPark, Helen Hejin
dc.contributor.authorJayaraman, Ashwin N Kr
dc.contributor.authorHeasley, Rachel Lenox
dc.contributor.authorYang, Chuanxi
dc.contributor.authorHartle, Lauren Ann
dc.contributor.authorMankad, Ravin
dc.contributor.authorHaight, Richard
dc.contributor.authorMitzi, David B.
dc.contributor.authorGunawan, Oki
dc.contributor.authorGordon, Roy Gerald
dc.date.accessioned2014-11-26T15:08:26Z
dc.date.issued2014
dc.identifierQuick submit: 2014-11-12T09:20:04-05:00
dc.identifier.citationPark, Helen Hejin, Ashwin Jayaraman, Rachel Heasley, Chuanxi Yang, Lauren Hartle, Ravin Mankad, Richard Haight, David B. Mitzi, Oki Gunawan, and Roy G. Gordon. 2014. “Atomic Layer Deposition of Al-Incorporated Zn(O,S) Thin Films with Tunable Electrical Properties.” Appl. Phys. Lett. 105 (20) (November 17): 202101. Portico. doi:10.1063/1.4901899.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:13436506
dc.description.abstractZinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to 1020 cm−3 with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 1019 to 1014 cm−3 for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) > 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.en_US
dc.description.sponsorshipChemistry and Chemical Biologyen_US
dc.language.isoen_USen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofdoi:dx.doi.org/10.1063/1.4901899en_US
dash.licenseLAA
dc.subjectZinc Oxysulfideen_US
dc.subjectBuffer Layeren_US
dc.subjectAtomic Layer Depositionen_US
dc.titleAtomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical propertiesen_US
dc.typeJournal Articleen_US
dc.date.updated2014-11-12T14:20:05Z
dc.description.versionAuthor's Originalen_US
dc.rights.holderPark, Helen Hejin; Jayaraman, Ashwin; Heasley, Rachel; Yang, Chuanxi; Hartle, Lauren; Mankad, Ravin; Haight, Richard; Mitzi, David B.; Gunawan, Oki; Gordon, Roy G.
dc.relation.journalApplied Physics Lettersen_US
dash.depositing.authorGordon, Roy Gerald
dash.waiver2012-02-02
dc.date.available2014-11-26T15:08:26Z
dc.identifier.doi10.1063/1.4901899*
dash.contributor.affiliatedHartle, Lauren
dash.contributor.affiliatedHeasley, Rachel Lenox
dash.contributor.affiliatedYang, Chuanxi
dash.contributor.affiliatedPark, Helen
dash.contributor.affiliatedGordon, Roy
dash.contributor.affiliatedJayaraman, Ashwin


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