Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

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Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

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Title: Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate
Author: Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy Gerald; Ye, Peide D.

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Citation: Zhang, Jingyun, Xiabing Lou, Mengwei Si, Heng Wu, Jiayi Shao, Michael J. Manfra, Roy G. Gordon, and Peide D. Ye. 2015. “Inversion-Mode GaAs Wave-Shaped Field-Effect Transistor on GaAs (100) Substrate.” Appl. Phys. Lett. 106 (7) (February 16): 073506. Portico. doi:10.1063/1.4913431.
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Abstract: Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.
Published Version: doi:10.1063/1.4913431
Other Sources: http://faculty.chemistry.harvard.edu/files/gordon/files/apl_wavefet_jingyun_2015.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:14117006
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