| dc.contributor.author | Zhang, Jingyun | |
| dc.contributor.author | Lou, Xiabing | |
| dc.contributor.author | Si, Mengwei | |
| dc.contributor.author | Wu, Heng | |
| dc.contributor.author | Shao, Jiayi | |
| dc.contributor.author | Manfra, Michael J. | |
| dc.contributor.author | Gordon, Roy Gerald | |
| dc.contributor.author | Ye, Peide D. | |
| dc.date.accessioned | 2015-03-10T21:06:54Z | |
| dc.date.issued | 2015 | |
| dc.identifier | Quick submit: 2015-02-24T10:33:41-05:00 | |
| dc.identifier.citation | Zhang, Jingyun, Xiabing Lou, Mengwei Si, Heng Wu, Jiayi Shao, Michael J. Manfra, Roy G. Gordon, and Peide D. Ye. 2015. “Inversion-Mode GaAs Wave-Shaped Field-Effect Transistor on GaAs (100) Substrate.” Appl. Phys. Lett. 106 (7) (February 16): 073506. Portico. doi:10.1063/1.4913431. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.issn | 1077-3118 | en_US |
| dc.identifier.uri | http://nrs.harvard.edu/urn-3:HUL.InstRepos:14117006 | |
| dc.description.abstract | Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107. | en_US |
| dc.description.sponsorship | Chemistry and Chemical Biology | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | AIP Publishing | en_US |
| dc.relation.isversionof | doi:10.1063/1.4913431 | en_US |
| dc.relation.hasversion | http://faculty.chemistry.harvard.edu/files/gordon/files/apl_wavefet_jingyun_2015.pdf | en_US |
| dash.license | OAP | |
| dc.title | Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate | en_US |
| dc.type | Journal Article | en_US |
| dc.date.updated | 2015-02-24T15:33:43Z | |
| dc.description.version | Accepted Manuscript | en_US |
| dc.rights.holder | Zhang, Jianyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide Y. | |
| dc.relation.journal | Applied Physics Letters | en_US |
| dash.depositing.author | Gordon, Roy Gerald | |
| dc.date.available | 2015-03-10T21:06:54Z | |
| dc.identifier.doi | 10.1063/1.4913431 | * |
| dash.contributor.affiliated | Lou, Xiabing | |
| dash.contributor.affiliated | Gordon, Roy | |
