Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur

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Fabbri, Filippo
Smith, Matthew J.
Gradečak, Silvija
Salviati, Giancarlo
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https://doi.org/10.1063/1.4788743Metadata
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Fabbri, Filippo, Matthew J. Smith, Daniel Recht, Michael J. Aziz, Silvija Gradečak, and Giancarlo Salviati. 2013. “Depth-Resolved Cathodoluminescence Spectroscopy of Silicon Supersaturated with Sulfur.” Appl. Phys. Lett. 102 (3): 031909. doi:10.1063/1.4788743.Abstract
We investigate the luminescence of Si supersaturated with S (Si:S) using depth-resolved cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S concentration is varied over 2 orders of magnitude \((10^{18}–10^{20} cm^{−3})\). In single-crystalline supersaturated Si:S, we identify strong luminescence from intra-gap states related to Si self-interstitials and a S-related luminescence at 0.85 eV, both of which show a strong dependence on S concentration in the supersaturated regime. Sufficiently high S concentrations in Si \((>10^{20} cm^{−3})\) result in complete luminescence quenching, which we propose is a consequence of the overlapping of the defect band and conduction band.Other Sources
http://projects.iq.harvard.edu/files/azizgroup/files/mja235.pdfhttp://aziz.seas.harvard.edu/files/azizgroup/files/mja235.pdf
http://dspace.mit.edu/handle/1721.1/79636
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