Show simple item record

dc.contributor.authorSimmons, C. B.
dc.contributor.authorAkey, Austin
dc.contributor.authorKrich, Jacob
dc.contributor.authorSullivan, Joseph T.
dc.contributor.authorRecht, Daniel
dc.contributor.authorAziz, Michael J.
dc.contributor.authorBuonassisi, Tonio
dc.date.accessioned2015-04-21T19:54:28Z
dc.date.issued2013
dc.identifier.citationSimmons, C. B., Austin J. Akey, Jacob J. Krich, Joseph T. Sullivan, Daniel Recht, Michael J. Aziz, and Tonio Buonassisi. 2013. “Deactivation of Metastable Single-Crystal Silicon Hyperdoped with Sulfur.” Journal of Applied Physics 114 (24) (December 28): 243514. doi:10.1063/1.4854835.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issn1089-7550en_US
dc.identifier.urihttp://nrs.harvard.edu/urn-3:HUL.InstRepos:14550026
dc.description.abstractSilicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon's band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal treatment. We explore this deactivation process through optical absorption and electronic transport measurements of sulfur-hyperdoped silicon subject to anneals at a range of durations and temperatures. The deactivation process is well described by the Johnson-Mehl-Avrami-Kolmogorov framework for the diffusion-mediated transformation of a metastable supersaturated solid solution, and we find that this transformation is characterized by an apparent activation energy of \(E_A=1.7 ± 0.1  eV\). Using this activation energy, the evolution of the optical and electronic properties for all anneal duration-temperature combinations collapse onto distinct curves as a function of the extent of reaction. We provide a mechanistic interpretation of this deactivation based on short-range thermally activated atomic movements of the dopants to form sulfur complexes.en_US
dc.description.sponsorshipEngineering and Applied Sciencesen_US
dc.language.isoen_USen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofdoi:10.1063/1.4854835en_US
dc.relation.hasversionhttp://aziz.seas.harvard.edu/files/azizgroup/files/mja242.pdfen_US
dc.relation.hasversionhttp://projects.iq.harvard.edu/files/azizgroup/files/mja242.pdfen_US
dc.relation.hasversionhttps://mysite.science.uottawa.ca/jkrich/wp-content/uploads/2012/01/Simmons13-JAP.pdfen_US
dash.licenseLAA
dc.subjectSiliconen_US
dc.subjectDopingen_US
dc.subjectDiffusionen_US
dc.subjectSilicon dopingen_US
dc.subjectActivation energiesen_US
dc.titleDeactivation of metastable single-crystal silicon hyperdoped with sulfuren_US
dc.typeJournal Articleen_US
dc.description.versionVersion of Recorden_US
dc.relation.journalJournal of Applied Physicsen_US
dash.depositing.authorAziz, Michael J.
dc.date.available2015-04-21T19:54:28Z
dc.identifier.doi10.1063/1.4854835*
workflow.legacycommentsFAR 2014en_US
dash.contributor.affiliatedAkey, Austin
dash.contributor.affiliatedKrich, Jacob Jonathan
dash.contributor.affiliatedRecht, Daniel
dash.contributor.affiliatedAziz, Michael


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record