Emergence of Very Broad Infrared Absorption Band by Hyperdoping of Silicon with Chalcogens

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Emergence of Very Broad Infrared Absorption Band by Hyperdoping of Silicon with Chalcogens

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Title: Emergence of Very Broad Infrared Absorption Band by Hyperdoping of Silicon with Chalcogens
Author: Umezu, Ikurou; Warrender, Jeffrey M.; Charnvanichborikarn, Supakit; Kohno, Atsushi; Williams, James S.; Tabbal, Malek; Papazoglou, Dimitris G.; Zhang, Xi-Cheng; Aziz, Michael J.

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Citation: Umezu, Ikurou, Jeffrey M. Warrender, Supakit Charnvanichborikarn, Atsushi Kohno, James S. Williams, Malek Tabbal, Dimitris G. Papazoglou, Xi-Cheng Zhang, and Michael J. Aziz. 2013. Emergence of Very Broad Infrared Absorption Band by Hyperdoping of Silicon with Chalcogens. Journal of Applied Physics 113(21): 213501.
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Abstract: We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05–1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.
Published Version: doi:10.1063/1.4804935
Other Sources: http://aziz.seas.harvard.edu/files/azizgroup/files/mja232.pdf
http://projects.iq.harvard.edu/files/azizgroup/files/mja232.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:17190516
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