Browsing FAS Scholarly Articles by Author "Rabedeau, T. A."

Now showing items 1-8 of 8

    • Complete Wetting of a Rough Surface: An X-Ray Study 

      Tidswell, I. M.; Rabedeau, T. A.; Pershan, Peter S.; Kosowsky, S. D. (American Physical Society, 1991)
      The evolution of the surface structure of a wetting film on a rough surface as a function of the film thickness has been studied by x-ray specular reflection and surface diffusion scattering. For thin films (\(\lesssim\)60 ...

    • Liquid-Vapor Density Profile of Helium: An X-Ray Study 

      Lurio, L. B.; Rabedeau, T. A.; Pershan, Peter S.; Silvera, Isaac F.; Deutsch, M.; Kosowsky, S. D.; Ocko, B. M. (American Physical Society, 1992)
      The average liquid-vapor density profiles 〈ρ(z)〉 of thick \(^4\)He films adsorbed onto a silicon substrate were measured using x-ray reflectivity. The results are well represented by a 90%-10% interfacial width of 9.2\(\pm\)1 ...

    • Wetting Films on Chemically Modified Surfaces: An X-Ray Study 

      Tidswell, I. M.; Rabedeau, T. A.; Pershan, Peter S.; Folkers, John P.; Baker, M. V.; Whitesides, George M. (American Physical Society, 1991)
      The wetting of silicon wafers and silicon wafers coated with alkylsiloxane monolayers by saturated vapors of cyclohexane and methanol were studied using x-ray specular reflection. Differentially heating the substrate surface ...

    • X-Ray Grazing Incidence Diffraction from Alkylsiloxane Monolayers on Silicon Wafers 

      Tidswell, I. M.; Rabedeau, T. A.; Pershan, Peter S.; Kosowsky, S. D.; Folkers, J. P.; Whitesides, George M. (American Institute of Physics, 1991)
      X‐ray reflection (both specular and off‐specular) and grazing incidence diffraction (GID) have been used to study the structure of alkylsiloxane monolayers (\(n‐C_{18}H_{37}SiO_{1.5}\)) formed by self‐assembly from solution ...

    • X-Ray Scattering Studies of the SiO\(_2\)/Si(001) Interfacial Structure 

      Rabedeau, T. A.; Tidswell, I. M.; Pershan, Peter S.; Bevk, J.; Freer, B. S. (American Institute of Physics, 1991)
      X‐ray scattering has been utilized in a study of the SiO\(_2\)/Si(001) interfacial structure. Scattering data provide evidence for a low coverage 2×1 epitaxial structure at the SiO\(_2\)/Si interface for dry oxides grown ...

    • X-Ray Specular Reflectivity of the \(^4He\) Liquid-Vapor Interface 

      Lurio, L. B.; Rabedeau, T. A.; Pershan, Peter S.; Silvera, Isaac F. (Elsevier, 1991)
      X-ray specular reflectivity measurements of a saturated film of helium absorbed onto an atomically flat silicon substrate have been made at several temperatures. The thickness of the film has been determined and some ...

    • X-Ray Specular-Reflectivity Study of the Liquid-Vapor Density Profile of \(^4\)He 

      Lurio, L B.; Rabedeau, T. A.; Pershan, Peter S.; Silvera, Isaac F.; Deutsch, M.; Kosowsky, S. D.; Ocko, B. M. (American Physical Society, 1993)
      The helium liquid-vapor interfacial density profile has been measured with x-ray specular reflectivity. Measurements were performed on thick films of helium adsorbed onto atomically flat silicon substrates. Both the amplitude ...

    • X‐Ray Reflectivity Studies of SiO\(_2\)/Si(001) 

      Rabedeau, T. A.; Tidswell, I. M.; Pershan, Peter S.; Bevk, J.; Freer, B. S. (American Institute of Physics, 1991)
      X‐ray reflectivity has been utilized in a study of the SiO\(_2\)/Si interfacial structure for dry oxides grown at room temperature on highly ordered Si(001) surfaces. Scattering near (\(\pm\)110) demonstrates the Si lattice ...