Browsing FAS Scholarly Articles by Title
Now showing items 1019-1038 of 18276
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Atom Interferometry Using Wave Packets with Constant Spatial Displacements
(American Physical Society, 2010)A standing-wave light-pulse sequence is demonstrated that places atoms into a superposition of wave packets with precisely controlled displacements that remain constant for times as long as 1 s. The separated wave packets ... -
Atom-by-atom nucleation and growth of graphene nanopores
(Proceedings of the National Academy of Sciences, 2012)Graphene is an ideal thin membrane substrate for creating molecule-scale devices. Here we demonstrate a scalable method for creating extremely small structures in graphene with atomic precision. It consists of inducing ... -
Atom-like crystal defects: From quantum computers to biological sensors
(AIP Publishing, 2014) -
Atomic classification of 6D SCFTs
(Wiley-VCH Verlag, 2015)We use F-theory to classify possibly all six-dimensional super-conformal field theories (SCFTs). This involves a two step process: We first classify all possible tensor branches allowed in F-theory (which correspond to ... -
Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors
(American Institute of Physics, 2012)Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD). The films maintained their amorphous character up to temperatures over 500 \(^{\circ}\)C. The highest ... -
Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
(American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ... -
Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties
(AIP Publishing, 2014)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 1019 to ... -
Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage
(AIP Publishing, 2019-05-27)Tin germanium oxide, (Sn,Ge)O2, films were prepared using atomic layer deposition and tailored to SnS absorber layer by incorporating various amounts of germanium into tin oxide to adjust band alignments at the interfaces ... -
Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
(Electrochemical Society, 2009)Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited ... -
Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor
(John Wiley & Sons, 2009-10-14)Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure ... -
Atomic Layer Deposition of Tin Monosulfide Thin Films
(Wiley-VCH, 2011)Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate ... -
Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H2S
(American Chemical Society (ACS), 2019-11-13)The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor deposition (CVD) and ... -
Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
(Royal Society of Chemistry, 2012)Atomic layer deposition (ALD) of tin oxide \((SnO_2)\) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric ... -
Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
(American Institute of Physics, 2013)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from ... -
Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores
(American Chemical Society, 2004)Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and ... -
Atomic layer epitaxy of rare earth oxide films on GaAs(111)A and their device properties
(2011)The aggressive scaling of MOSFETs has created interest in using high-mobility III-V channel materials to replace traditional strained Si. However, it has been challenging to form high- \(\kappa\) dielectrics that can ... -
Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001)
(American Physical Society, 1995)