Browsing FAS Scholarly Articles by Title
Now showing items 1029-1048 of 18292
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Atomic Layer Deposition of Lanthanum-Based Ternary Oxides
(Electrochemical Society, 2009)Lanthanum-based ternary oxide \(La_xM_{2−x}O_3\) (M = Sc, Lu, or Y) films were deposited on HF-last Si substrates by atomic layer deposition. Both \(LaScO_3\) and \(LaLuO_3\) films are amorphous while the as-deposited ... -
Atomic Layer Deposition of Ruthenium Thin Films From an Amidinate Precursor
(John Wiley & Sons, 2009-10-14)Ruthenium thin films were deposited by atomic layer deposition from bis(N,N’-di-tert-butylacetamidinato)ruthenium(II) dicarbonyl and O2. Highly conductive, dense and pure thin films can be deposited when oxygen exposure ... -
Atomic Layer Deposition of Tin Monosulfide Thin Films
(Wiley-VCH, 2011)Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses \(Cu(In,Ga)(S,Se)_2\) and \(CdTe\), which contain scarce and toxic elements. One promising candidate ... -
Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N,N′-diisopropylformamidinato)tin(II) and H2S
(American Chemical Society (ACS), 2019-11-13)The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor deposition (CVD) and ... -
Atomic Layer Deposition of Tin Oxide with Nitric Oxide as an Oxidant Gas
(Royal Society of Chemistry, 2012)Atomic layer deposition (ALD) of tin oxide \((SnO_2)\) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric ... -
Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
(American Institute of Physics, 2013)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from ... -
Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores
(American Chemical Society, 2004)Atomic layer deposition of alumina enhanced the molecule sensing characteristics of fabricated nanopores by fine-tuning their surface properties, reducing 1/f noise, neutralizing surface charge to favor capture of DNA and ... -
Atomic layer epitaxy of rare earth oxide films on GaAs(111)A and their device properties
(2011)The aggressive scaling of MOSFETs has created interest in using high-mobility III-V channel materials to replace traditional strained Si. However, it has been challenging to form high- \(\kappa\) dielectrics that can ... -
Atomic Structure and Bonding of Boron-Induced Reconstructions on Si(001)
(American Physical Society, 1995) -
Atomic-scale electronic structure of the cuprate d-symmetry form factor density wave state
(Nature Publishing Group, 2015)Research on high-temperature superconducting cuprates is at present focused on identifying the relationship between the classic ‘pseudogap’ phenomenon and the more recently investigated density wave state. This state is ... -
Atomic-Scale Nuclear Spin Imaging Using Quantum-Assisted Sensors in Diamond
(American Physical Society (APS), 2015)Nuclear spin imaging at the atomic level is essential for the understanding of fundamental biological phenomena and for applications such as drug discovery. The advent of novel nanoscale sensors promises to achieve the ... -
Atomic-Scale Surface Demixing in a Eutectic Liquid BiSn Alloy
(American Physical Society, 2005)Resonant x-ray reflectivity of the surface of the liquid phase of the Bi43Sn57 eutectic alloy reveals atomic-scale demixing extending over three near-surface atomic layers. Because of the absence of an underlying atomic ... -
Atomically Resolved Single-Walled Carbon Nanotube Intramolecular Junctions
(American Association for the Advancement of Science, 2001)Intramolecular junctions in single-walled carbon nanotubes are potentially ideal structures for building robust, molecular-scale electronics but have only been studied theoretically at the atomic level. Scanning tunneling ... -
Atomically thin p–n junctions with van der Waals heterointerfaces
(Nature Publishing Group, 2014)Semiconductor p–n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p–n junctions, regions depleted of free charge carriers form on either side of the junction, generating ... -
Atomistic aspects of diffusion and growth on the Si and Ge (111) surfaces
(Elsevier, 1996)The stability of interfaces and the mechanisms of thin film growth on semiconductors are issues of central importance in electronic devices. These can be understood through detailed study of the relevant microscopic ... -
Atomistic Features of the Amorphous-Crystal Interface in Silicon
(Springer Verlag, 1998)We simulate the amorphous-crystal interface in silicon using a combination of interatomic potential molecular-dynamics and tight-binding conjugate-gradient relaxation. The samples we create have high quality crystalline ... -
Atomistic mechanisms for bilayer growth of graphene on metal substrates
(American Physical Society, 2015) -
Atomistic Mechanisms for the Thermal Relaxation of Au-hyperdoped Si
(American Physical Society (APS), 2019-08-08) -
An Atomistic Model of Solute Trapping
(National Bureau of Standards, 1982)