Browsing FAS Scholarly Articles by Keyword "crystal defects"
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Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au
(AIP Publishing, 1994)High quality homoepitaxialgrowth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited ...