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    • III-V 4D Transistors 

      Gu, J.J.; Wang, Xinwei; Shao, J.; Neal, A.T.; Manfra, M.J.; Gordon, Roy Gerald; Ye, P.D. (Institute of Electrical and Electronics Engineers, 2012)
      We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance ...
    • A Robust Scanning Diamond Sensor for Nanoscale Imaging with Single Nitrogen-Vacancy Centres 

      Maletinsky, Patrick; Hong, Sungkun; Grinolds, Michael Sean; Hausmann, Birgit Judith Maria; Lukin, Mikhail D.; Walsworth, Ronald L.; Loncar, Marko; Yacoby, Amir (Nature Publishing Group, 2012)
      The nitrogen-vacancy defect centre in diamond has potential applications in nanoscale electric and magnetic-field sensing, single-photon microscopy, quantum information processing and bioimaging. These applications rely ...