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    • Modeling a Growth Instability in Stressed Boron Doped Silicon 

      Phan, Anh Vu; Kaplan, Ted; Gray, Leonard J.; Barvosa-Carter, William; Aziz, Michael (Applied Computational Research Society; Nano science and technology institute, 2002)
      The effects of rate-enhancing dopants and externally applied stress on interfacial growth during silicon crystallization are modeled using advanced numerical methods. The boron doped crystalline Si is modeled as an isotropic ...