Browsing FAS Scholarly Articles by Keyword "wide band gap semiconductors"
Now showing items 1-8 of 8
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Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
(American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ... -
Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing
(American Institute of Physics, 2013)Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from ... -
Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities
(American Institute of Physics, 2011)Controlled tuning of the whispering gallery modes of GaN/InGaN microdisk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the microdisks in water and irradiating ... -
Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks
(American Institute of Physics, 2011)Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. ... -
Enhancing the Efficiency of SnS Solar Cells bia Band-Offset Engineering with a Zinc Oxysulfide Buffer Layer
(American Institute of Physics, 2013)SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure ... -
High Extraction Efficiency Light-emitting Diodes Based on Embedded Air-gap Photonic-crystals
(American Institute of Physics, 2010)This letter reports on high extraction efficiency light-emitting diodes (LEDs) based on embedded two-dimensional air-gap photonic crystals (PhCs). High refractive index contrast provided by the air gaps along with high ... -
Measurement of Extraction and Absorption Parameters in GaN-based Photonic-crystal Light-emitting Diodes
(American Institute of Physics, 2010)The light extraction efficiency of photonic-crystal (PhC) light-emitting diodes (LEDs) relies on the competition between the PhC extraction and dissipation mechanisms of the guided light within the LED. This work presents ... -
Narrow Band Defect Luminescence from AI-doped ZnO Probed by Scanning Tunneling Cathodoluminescence
(American Institute of Physics, 2011)We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are ...