Now showing items 1-3 of 3

    • Atomistic Features of the Amorphous-Crystal Interface in Silicon 

      Kaxiras, Efthimios; Bernstien, Noam; Aziz, Michael (Springer Verlag, 1998)
      We simulate the amorphous-crystal interface in silicon using a combination of interatomic potential molecular-dynamics and tight-binding conjugate-gradient relaxation. The samples we create have high quality crystalline ...
    • Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer 

      Evans, P. G.; Dubon, O. D.; Chervinsky, J; Spaepen, F.; Golovchenko, Jene Andrew (AIP Publishing, 1998)
      A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. ...
    • Thermal Activation and Saturation of Ion Beam Sculpting 

      Hoogerheide, David Paul; George, H. Bola; Golovchenko, Jene A.; Aziz, Michael J. (American Institute of Physics, 2011)
      We report a material-dependent critical temperature for ion beam sculpting of nanopores in amorphous materials under keV ion irradiation. At temperatures below the critical temperature, irradiated pores open at a rate that ...