Browsing FAS Scholarly Articles by Keyword "crystal defects"

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    • Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au 

      Wilk, G. D.; Martinez, R; Chervinsky, John; Spaepen, Frans A.; Golovchenko, Jene Andrew (AIP Publishing, 1994)
      High quality homoepitaxialgrowth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited ...