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    • Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature 

      Xiong, Fulin; Ganz, Eric; Loeser, A. G.; Golovchenko, Jene Andrew; Spaepen, Frans A. (AIP Publishing, 1991)
      We demonstrate liquid‐metal‐mediatedhomoepitaxialcrystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto ...