Browsing FAS Scholarly Articles by Keyword "epitaxy"
Now showing items 1-7 of 7
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Effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow
(AIP Publishing, 1997)Observations of homoepitaxialgrowth on low-angle miscut (∼0.1°) Si(111) substrates through an overlayer of Au, together with earlier results on highly miscut Si(111) surfaces, indicate that growth in this system occurs by ... -
Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
(American Chemical Society (ACS), 2016)We demonstrate for the first time that a singlecrystalline epitaxial MgxCa1−xO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the ... -
Heteroepitaxy of \(La_2O_3\) and \(La_{2-x}Y_xO_3\) on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
(American Chemical Society, 2013-02-04)GaAs metal–oxide–semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the ... -
Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature
(AIP Publishing, 1991)We demonstrate liquid‐metal‐mediatedhomoepitaxialcrystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto ... -
Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au
(AIP Publishing, 1994)High quality homoepitaxialgrowth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited ... -
Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer
(AIP Publishing, 1998)A monolayer of Pb mediates high-quality homoepitaxialgrowth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. ...