Browsing FAS Scholarly Articles by Keyword "gallium compounds"
Now showing items 1-5 of 5
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Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
(American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ... -
Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities
(American Institute of Physics, 2011)Controlled tuning of the whispering gallery modes of GaN/InGaN microdisk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the microdisks in water and irradiating ... -
Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks
(American Institute of Physics, 2011)Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. ... -
High Extraction Efficiency Light-emitting Diodes Based on Embedded Air-gap Photonic-crystals
(American Institute of Physics, 2010)This letter reports on high extraction efficiency light-emitting diodes (LEDs) based on embedded two-dimensional air-gap photonic crystals (PhCs). High refractive index contrast provided by the air gaps along with high ... -
Measurement of Extraction and Absorption Parameters in GaN-based Photonic-crystal Light-emitting Diodes
(American Institute of Physics, 2010)The light extraction efficiency of photonic-crystal (PhC) light-emitting diodes (LEDs) relies on the competition between the PhC extraction and dissipation mechanisms of the guided light within the LED. This work presents ...