Browsing FAS Scholarly Articles by Keyword "germanium"
Now showing items 1-5 of 5
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Dynamics of Q-switched laser annealing
(AIP Publishing, 1979)Using time‐resolved optical‐reflectivity measurements, the duration of the thin liquid layer accompanying Q‐switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied ... -
High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer
(American Institute of Physics, 2010)Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) \(LaLuO_3\) as gate dielectric. Significant improvement ... -
Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature
(AIP Publishing, 1991)We demonstrate liquid‐metal‐mediatedhomoepitaxialcrystal growth of Ge on Ge(111) at temperatures in the range of 400–450 °C. Crystal growth proceeds by diffusion of Ge through a liquid layer, followed by precipitation onto ... -
Modeling RHEED Intensity Oscillations in Multilayer Epitaxy: Determination of the Ehrlich-Schwoebel Barrier in Ge(001) Homoepitaxy
(American Physical Society, 2007)We report the study of submonolayer growth of Ge(001) homoepitaxy by molecular beam epitaxy at low temperatures, 100–150 °C, using reflection high energy electron diffraction (RHEED) intensity oscillations obtained for a ... -
Three-stage lattice relaxation of Ge islands on Si(111) measured by tunneling microscopy
(AIP Publishing, 1995)We use the tunneling microscope to measure the surface lattice spacing of Ge islands grown on Si(111) as a function of their height. It changes in three stages: (I) (0–50 layers tall) Rapid relaxation from near the bulk ...