Browsing FAS Scholarly Articles by Keyword "high electron mobility transistors"
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Atomic Layer Deposition of \(Sc_2O_3\) for Passivating AlGaN/GaN High Electron Mobility Transistor Devices
(American Institute of Physics, 2012)Polycrystalline, partially epitaxial \(Sc_2O_3\) films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD \(Sc_2O_3\) film as the insulator layer, the \(Sc_2O_3\)/AlGaN/GaN metal-insulator- ...