Browsing FAS Scholarly Articles by Keyword "indium compounds"
Now showing items 1-5 of 5
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Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities
(American Institute of Physics, 2011)Controlled tuning of the whispering gallery modes of GaN/InGaN microdisk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the microdisks in water and irradiating ... -
Dislocation Density-Dependent Quality Factors in InGaN Quantum Dot Containing Microdisks
(American Institute of Physics, 2011)Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. ... -
Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors
(American Institute of Physics, 2013)InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) ... -
Enhancing the Efficiency of SnS Solar Cells bia Band-Offset Engineering with a Zinc Oxysulfide Buffer Layer
(American Institute of Physics, 2013)SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure ... -
III-V 4D Transistors
(Institute of Electrical and Electronics Engineers, 2012)We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with \(3×4\) arrays show high drive current of \(1.35mA/ \mu m\) and high transconductance ...