Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface
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CitationAltfeder, I. B., J. A. Golovchenko, and V. Narayanamurti. 2001. “Confinement-Enhanced Electron Transport Across a Metal-Semiconductor Interface.” Physical Review Letters 87 (5) (July). doi:10.1103/physrevlett.87.056801.
AbstractWe present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:21976372
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