Heterostructures based on inorganic and organic van der Waals systems

 
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Lee, Gwan-Hyoung
Lee, Chul-Ho
van der Zande, Arend M.
Cui, Xu
Arefe, Ghidewon
Nuckolls, Colin
Heinz, Tony F.
Hone, James
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https://doi.org/10.1063/1.4894435
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Lee, Gwan-Hyoung, Chul-Ho Lee, Arend M. van der Zande, Minyong Han, Xu Cui, Ghidewon Arefe, Colin Nuckolls, Tony F. Heinz, James Hone, and Philip Kim. 2014. “Heterostructures Based on Inorganic and Organic van Der Waals Systems.” APL Materials 2 (9) (September 1): 092511. CLOCKSS. doi:10.1063/1.4894435.
Abstract
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organicinorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors
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http://nrs.harvard.edu/urn-3:HUL.InstRepos:22557382

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