Transport in Two-Dimensional Disordered Semimetals

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Transport in Two-Dimensional Disordered Semimetals

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Title: Transport in Two-Dimensional Disordered Semimetals
Author: Knap, Michael; Sau, Jay D.; Halperin, Bertrand I.; Demler, Eugene A.

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Citation: Knap, Michael, Jay D. Sau, Bertrand I. Halperin, and Eugene Demler. 2014. “Transport in Two-Dimensional Disordered Semimetals.” Physical Review Letters 113 (18) (October). doi:10.1103/physrevlett.113.186801.
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Abstract: We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complementary mapping on resistor networks. In the presence of smooth disorder and in the limit of a weak electron-hole recombination rate, we find for small but finite overlap of the electron and hole bands an abrupt upturn in resistivity when lowering the temperature but no divergence at zero temperature. We discuss how this behavior is relevant for several experimental realizations and introduce a simple physical explanation for this effect.
Published Version: 10.1103/PhysRevLett.113.186801
Other Sources: http://arxiv.org/pdf/1405.0277v3.pdf
Terms of Use: This article is made available under the terms and conditions applicable to Other Posted Material, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#LAA
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:22856735
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