Stress evolution in Si during low-energy ion bombardment

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Stress evolution in Si during low-energy ion bombardment

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Title: Stress evolution in Si during low-energy ion bombardment
Author: Ishii, Yohei; Madi, Charbel S.; Aziz, Michael J.; Chason, Eric

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Citation: Ishii, Yohei, Charbel S. Madi, Michael J. Aziz, and Eric Chason. 2014. “Stress Evolution in Si During Low-Energy Ion Bombardment.” J. Mater. Res. 29 (24) (November 25): 2942–2948. doi:10.1557/jmr.2014.350.
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Abstract: Measurements of stress evolution during low energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress evolution and relaxation mechanisms, we account for the measured behavior with a model for viscous relaxation that includes the ion-induced generation and annihilation of flow defects in an amorphous Si surface layer. The analysis indicates that bimolecular annihilation (i.e., defect recombination) is the dominant mechanism controlling the defect concentration both during irradiation and after the cessation of irradiation. From the analysis we determine a value for the fluidity per flow defect.
Published Version: doi:10.1557/jmr.2014.350
Terms of Use: This article is made available under the terms and conditions applicable to Open Access Policy Articles, as set forth at http://nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of-use#OAP
Citable link to this page: http://nrs.harvard.edu/urn-3:HUL.InstRepos:22968433
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