Non-monotonic effect of growth temperature on carrier collection in SnS solar cells
Brandt, R. E.
Poindexter, J. R.
Mailoa, J. P.
Buonassisi, T.Note: Order does not necessarily reflect citation order of authors.
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CitationChakraborty, R., V. Steinmann, N. M. Mangan, R. E. Brandt, J. R. Poindexter, R. Jaramillo, J. P. Mailoa, et al. 2015. “Non-Monotonic Effect of Growth Temperature on Carrier Collection in SnS Solar Cells.” Applied Physics Letters 106 (20) (May 18): 203901. Portico. doi:10.1063/1.4921326.
Abstracte quantify the effects of growth temperature on material and deviceproperties of thermally evaporated SnSthin-films and test structures. Grain size, Hall mobility, and majority-carrier concentration monotonically increase with growth temperature. However, the charge collection as measured by the long-wavelength contribution to short-circuit current exhibits a non-monotonic behavior: the collection decreases with increased growth temperature from 150 °C to 240 °C and then recovers at 285 °C. Fits to the experimental internal quantum efficiency using an opto-electronic model indicate that the non-monotonic behavior of charge-carrier collection can be explained by a transition from drift- to diffusion-assisted components of carrier collection. The results show a promising increase in the extracted minority-carrier diffusion length at the highest growth temperature of 285 °C. These findings illustrate how coupled mechanisms can affect early stage device development, highlighting the critical role of direct materials property measurements and simulation.
Citable link to this pagehttp://nrs.harvard.edu/urn-3:HUL.InstRepos:23894154
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