Pressure dependence of arsenic diffusivity in silicon
Nygren Aziz Turnbull APL 1985 (205.7Kb)
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Poate, John M.
Jacobson, Dale C.
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CitationNygren, Eric, Michael J. Aziz, David Turnbull, John M. Poate, Dale C. Jacobson, and Robert Hull. 1985. Pressure dependence of arsenic diffusivity in silicon. Applied Physics Letters 47, no. 2: 105-107.
AbstractThe diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of −5.7±0.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.
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